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| 2005. 8. 17 1/2 semiconductor technical data KDR730V schottky barrier type diode revision no : 0 low current rectification and high speed switching. features low forward voltage. high reliability. small package . maximum rating (ta=25 ) vsc dim millimeters a b c d e 1.4 y 0.05 cathode mark c d b a e f f 1.0 y 0.05 0.6 y 0.05 0.28 y 0.03 0.5 y 0.05 0.12 y 0.03 2 1 1. anode 2. cathode electrical characteristics (ta=25 ) type name marking sa characteristic symbol test condition min. typ. max. unit forward voltage v f i f =10ma - - 0.45 v reverse current i r v r =10v - - 0.5 a characteristic symbol rating unit reverse voltage v r 30 v average forward current i o 100 ma surge current(10ms) i rsm 500 ma junction temperature t j 125 storage temperature range t stg -55 125
2005. 8. 17 2/2 KDR730V revision no : 0 i - v rr 0 1 10 10 100000 1000000 10 00 100 00 1 00 i f - v f total capacitance c t (pf) c t - v r 20 30 40 30 25 15 20 010 5 1 100 10 0 100 0.001 0.01 0.1 200 300 400 500 700 600 1 10 100 1000 75 c 25 c 125 c - 25 c f =1mhz 125 c 75 c 25 c - 25 c reverse current i (na) r reverse voltage v (v) r forward current i f (ma) forward voltage v (mv) f reverse voltage v r (v) |
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